Influence of carrier statistics on InGaN quantum dot device performance
نویسندگان
چکیده
In this work InGaN quantum dots (QDs) in GaN matrix formed during strain induced phase separation were investigated. We show that although electron – photon interaction rate in residual quantum well (QW) InGaN is high, carrier capture to QD levels and carrier escape from QD levels to the QW is slowed presumably due to large energy distance between the QD levels and between the QD levels and the QW band. This leads to deviation of quasiequilibrium of carrier distribution in QDs even at temperature higher than 300K. We also modify rate equation model taking into account this deviation. In this model we consider the QW as a quasiequilibrium reservoir, but carrier statistics in the QDs is calculated in term of nonequilibrium statistics of Sah-Noyce-Shokkley-Read centers with strongly inhomogeneous localization depth. This model describes lasing line broadening in terms of carrier burning and formation of multimode emission.
منابع مشابه
Effect of PbS Film Thickness on the Performance of Colloidal Quantum Dot Solar Cells
Colloidal quantum dots offer broad tuning of semiconductor band structure via the quantum size effect. In this paper, we present a detailed investigation on the influence of the thickness of colloidal lead sulfide (PbS) nanocrystals (active layer) to the photovoltaic performance of colloidal quantum dot solar cells. The PbS nanocrystals (QDs) were synthesized in a non-coordinating solvent, 1-oc...
متن کاملImproving Blue InGaN Laser Diodes Performance with Waveguide Structure Engineering
To enhance lasers’ power and improve their performance, a model wasapplied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, whichis much easier to implement. The conventional and new laser structures weretheoretically investigated using simulation software PICS3D, which self-consistentlycombines 3D simulation of carrier transport, self-heating, and opt...
متن کاملA Proposal for a New Method of Modeling of the Quantum Dot Semiconductor Optical Amplifiers
With the advancement of nanoscale semiconductor technology,semiconductor optical amplifiers are used to amplify and process all-optical signals. Inthis paper, with the aim of calculating the gain of quantum dot semiconductor opticalamplifier (QD-SOA), two groups of rate equations and the optical signal propagatingequation are used in the active layer of the device. For t...
متن کاملEngineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers
We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier ...
متن کاملTime-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)
Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...
متن کامل